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Insinga zo gusudira za JY·H08MnA zo mu bwoko bwa silikoni buri hagati ya manganese na silicon.

Insinga zo gusudira za JY·H08MnA zo mu bwoko bwa silikoni buri hagati ya manganese na silicon. Ishusho y'ingenzi
  • Insinga zo gusudira za JY·H08MnA zo mu bwoko bwa silikoni buri hagati ya manganese na silicon.

Insinga zo gusudira za JY·H08MnA zo mu bwoko bwa silikoni buri hagati ya manganese na silicon.

Ni ubwoko bw'insinga zo gusudira zo mu bwoko bwa manganese nkeya, zihuye n'uburyo bwo gusudira bwo mu bwoko bwa manganese n'ubwo mu bwoko bwa silicon, ntizishobora kwangirika ku cyuma cyo hasi, zifite ubushobozi bwo gushushanya neza no gukuraho slag. Insinga zishobora gushyirwaho rimwe cyangwa kabiri hamwe na AC/DC.


Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Porogaramu

Intego:Ikoresheje flux ya sintered JY·SJ101, ishobora gukoreshwa haba mu gusudira vuba cyane icyuma gifite imbaraga zo gukurura 420MPa ndetse no mu gusudira mu buryo bworoshye.

XXQ (1)
XQ (2)
XQ (3)

Imiterere y'imiti y'insinga zo gusudira (%)

Ikintu cy'igerageza C Mn Si S P Cr Ni Cu
Agaciro k'ingwate ≤0.10 0.80～1.10 ≤0.07 ≤0.030 ≤0.030 ≤0.020 ≤0.030 ≤0.35
Ibisubizo Rusange 0.066 0.96 0.038 0.007 0.01 0.027 0.011 0.11

Imiterere ya tekiniki y'ibyuma byabitswe

Ikintu cyo gupima/gupima Rm (MPa) ReL/Rpo.2 (MPa) A(%) KV₂ (J) -20℃
JY ·SJ101 415~550 ≥330 ≥22 ≥27

Ingano y'insinga zo gusudira

Ingano (mm) φ2.5 φ3.2 φ4.0 φ5.0
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